Atomic and electronic structure of doped Si(111)(23×23)R30∘ -Sn interfaces
نویسندگان
چکیده
منابع مشابه
Electronic structure of potassium - doped
The electronic structure of potassium-doped La@C82 has been studied with synchrotron-radiation photoelectron spectroscopy. Ultraviolet photoemission measurements indicate evolution of the valence-band states of La@C82 with increasing potassium content, but KxLa@C82 remains semiconducting for all x between 0 and 6, with a band gap of at least 0.4 eV, in contrast to K-doped C60. The valence-band ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.97.195402